2005 |
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Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon Journal Article In: Applied Physics Letters, vol. 86, no. 19, pp. 192901, 2005. | |
Abrupt model interface for the 4H(1000)SiC-SiO2 interface Journal Article In: Microelectronic Engineering, vol. 80, pp. 38 - 41, 2005, ISSN: 0167-9317. | |
Infrared properties of ultrathin oxides on Si(100) Journal Article In: Microelectronic Engineering, vol. 80, pp. 420 - 423, 2005, ISSN: 0167-9317. | |
Electronic and dielectric properties of a suboxide interlayer at the silicon–oxide interface in MOS devices Journal Article In: Surface Science, vol. 586, no. 1, pp. 183 - 191, 2005, ISSN: 0039-6028. | |
2004 |
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Electronic structure at realistic Si(100)-SiO2 interfaces Journal Article In: Japanese Journal of Applied Physics, vol. 43, no. 11B, pp. 7895–7898, 2004. | |
Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides Journal Article In: Microelectronic Engineering, vol. 72, no. 1, pp. 299 - 303, 2004. | |
2003 |
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Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon Journal Article In: Physical Review Letters, vol. 91, pp. 267601, 2003. | |
2002 |
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Model for high-temperature radiation effects in n-p-n bipolar-junction transistors Journal Article In: IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 2990-2997, 2002. | |
Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature Journal Article In: IEEE Transactions on Nuclear Science, vol. 49, no. 3, pp. 1474-1479, 2002. | |
Modeling of Si 2p core-level shifts at Si-(ZrO2)_x(SiO2)_1-x interfaces Journal Article In: Applied Physics Letters, vol. 81, no. 22, pp. 4233-4235, 2002. |
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