@article{Giustino2005b,

title = {Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon},

author = {Feliciano Giustino and Angelo Bongiorno and Alfredo Pasquarello},

doi = {10.1063/1.1923185},

year  = {2005},

date = {2005-01-01},

journal = {Applied Physics Letters},

volume = {86},

number = {19},

pages = {192901},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Devynck2005,

title = {Abrupt model interface for the 4H(1000)SiC-SiO2 interface},

author = {Fabien Devynck and Feliciano Giustino and Alfredo Pasquarello},

doi = {10.1016/j.mee.2005.04.021},

issn = {0167-9317},

year  = {2005},

date = {2005-01-01},

journal = {Microelectronic Engineering},

volume = {80},

pages = {38 - 41},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Giustino2005d,

title = {Infrared properties of ultrathin oxides on Si(100)},

author = {Feliciano Giustino and Alfredo Pasquarello},

doi = {10.1016/j.mee.2005.04.025},

issn = {0167-9317},

year  = {2005},

date = {2005-01-01},

journal = {Microelectronic Engineering},

volume = {80},

pages = {420 - 423},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Giustino2005f,

title = {Electronic and dielectric properties of a suboxide interlayer at the silicon–oxide interface in MOS devices},

author = {Feliciano Giustino and Alfredo Pasquarello},

doi = {10.1016/j.susc.2005.05.012},

issn = {0039-6028},

year  = {2005},

date = {2005-01-01},

journal = {Surface Science},

volume = {586},

number = {1},

pages = {183 - 191},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Giustino2004,

title = {Electronic structure at realistic Si(100)-SiO2 interfaces},

author = {Feliciano Giustino and Angelo Bongiorno and Alfredo Pasquarello},

doi = {10.1143/jjap.43.7895},

year  = {2004},

date = {2004-11-01},

journal = {Japanese Journal of Applied Physics},

volume = {43},

number = {11B},

pages = {7895--7898},

publisher = {Japan Society of Applied Physics},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Giustino2004b,

title = {Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides},

author = {Feliciano Giustino and Paolo Umari and Alfredo Pasquarello},

doi = {10.1016/j.mee.2004.01.011},

year  = {2004},

date = {2004-01-01},

journal = {Microelectronic Engineering},

volume = {72},

number = {1},

pages = {299 - 303},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Giustino2003,

title = {Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon},

author = {Feliciano Giustino and Paolo Umari and Alfredo Pasquarello},

doi = {10.1103/PhysRevLett.91.267601},

year  = {2003},

date = {2003-12-01},

journal = {Physical Review Letters},

volume = {91},

pages = {267601},

publisher = {American Physical Society},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Boch2002,

title = {Model for high-temperature radiation effects in n-p-n bipolar-junction transistors},

author = {J Boch and F Saigne and V Mannoni and F Giustino and R D Schrimpf and L Dusseau and K F Galloway and J Fesquet and J Gasiot and R Ecoffet},

doi = {10.1109/TNS.2002.805367},

year  = {2002},

date = {2002-12-01},

journal = {IEEE Transactions on Nuclear Science},

volume = {49},

number = {6},

pages = {2990-2997},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Boch2002b,

title = {Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature},

author = {J Boch and E Saigne and T Maurel and F Giustino and L Dusseau and R D Schrimpf and K F Galloway and J P David and R Ecoffet and J Fesquet and J Gasiot},

doi = {10.1109/TNS.2002.1039686},

year  = {2002},

date = {2002-06-01},

journal = {IEEE Transactions on Nuclear Science},

volume = {49},

number = {3},

pages = {1474-1479},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{,

title = {Modeling of Si 2p core-level shifts at Si-(ZrO2)_x(SiO2)_1-x interfaces},

doi = {10.1063/1.1526172},

year  = {2002},

date = {2002-01-01},

journal = {Applied Physics Letters},

volume = {81},

number = {22},

pages = {4233-4235},

keywords = {},

pubstate = {published},

tppubtype = {article}

}