Feliciano Giustino; Angelo Bongiorno; Alfredo Pasquarello

Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties Journal Article

Journal of Physics: Condensed Matter, 17 (21), pp. S2065–S2074, 2005.

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Feliciano Giustino; Alfredo Pasquarello

Theory of atomic-scale dielectric permittivity at insulator interfaces Journal Article

Physical Review B, 71 , pp. 144104, 2005.

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Feliciano Giustino; Angelo Bongiorno; Alfredo Pasquarello

Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon Journal Article

Applied Physics Letters, 86 (19), pp. 192901, 2005.

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Fabien Devynck; Feliciano Giustino; Alfredo Pasquarello

Abrupt model interface for the 4H(1000)SiC-SiO2 interface Journal Article

Microelectronic Engineering, 80 , pp. 38 - 41, 2005, ISSN: 0167-9317.

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Feliciano Giustino; Alfredo Pasquarello

Infrared properties of ultrathin oxides on Si(100) Journal Article

Microelectronic Engineering, 80 , pp. 420 - 423, 2005, ISSN: 0167-9317.

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Feliciano Giustino; Alfredo Pasquarello

Electronic and dielectric properties of a suboxide interlayer at the silicon–oxide interface in MOS devices Journal Article

Surface Science, 586 (1), pp. 183 - 191, 2005, ISSN: 0039-6028.

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Feliciano Giustino; Angelo Bongiorno; Alfredo Pasquarello

Electronic structure at realistic Si(100)-SiO2 interfaces Journal Article

Japanese Journal of Applied Physics, 43 (11B), pp. 7895–7898, 2004.

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Feliciano Giustino; Paolo Umari; Alfredo Pasquarello

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides Journal Article

Microelectronic Engineering, 72 (1), pp. 299 - 303, 2004.

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Feliciano Giustino; Paolo Umari; Alfredo Pasquarello

Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon Journal Article

Physical Review Letters, 91 , pp. 267601, 2003.

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J Boch; F Saigne; V Mannoni; F Giustino; R D Schrimpf; L Dusseau; K F Galloway; J Fesquet; J Gasiot; R Ecoffet

Model for high-temperature radiation effects in n-p-n bipolar-junction transistors Journal Article

IEEE Transactions on Nuclear Science, 49 (6), pp. 2990-2997, 2002.

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J Boch; E Saigne; T Maurel; F Giustino; L Dusseau; R D Schrimpf; K F Galloway; J P David; R Ecoffet; J Fesquet; J Gasiot

Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature Journal Article

IEEE Transactions on Nuclear Science, 49 (3), pp. 1474-1479, 2002.

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Modeling of Si 2p core-level shifts at Si-(ZrO2)_x(SiO2)_1-x interfaces Journal Article

Applied Physics Letters, 81 (22), pp. 4233-4235, 2002.

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