2005 |
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Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties Journal Article Journal of Physics: Condensed Matter, 17 (21), pp. S2065–S2074, 2005. | |
Theory of atomic-scale dielectric permittivity at insulator interfaces Journal Article Physical Review B, 71 , pp. 144104, 2005. | |
Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon Journal Article Applied Physics Letters, 86 (19), pp. 192901, 2005. | |
Abrupt model interface for the 4H(1000)SiC-SiO2 interface Journal Article Microelectronic Engineering, 80 , pp. 38 - 41, 2005, ISSN: 0167-9317. | |
Infrared properties of ultrathin oxides on Si(100) Journal Article Microelectronic Engineering, 80 , pp. 420 - 423, 2005, ISSN: 0167-9317. | |
Electronic and dielectric properties of a suboxide interlayer at the silicon–oxide interface in MOS devices Journal Article Surface Science, 586 (1), pp. 183 - 191, 2005, ISSN: 0039-6028. | |
2004 |
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Electronic structure at realistic Si(100)-SiO2 interfaces Journal Article Japanese Journal of Applied Physics, 43 (11B), pp. 7895–7898, 2004. | |
Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides Journal Article Microelectronic Engineering, 72 (1), pp. 299 - 303, 2004. | |
2003 |
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Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon Journal Article Physical Review Letters, 91 , pp. 267601, 2003. | |
2002 |
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Model for high-temperature radiation effects in n-p-n bipolar-junction transistors Journal Article IEEE Transactions on Nuclear Science, 49 (6), pp. 2990-2997, 2002. | |
Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature Journal Article IEEE Transactions on Nuclear Science, 49 (3), pp. 1474-1479, 2002. | |
Modeling of Si 2p core-level shifts at Si-(ZrO2)_x(SiO2)_1-x interfaces Journal Article Applied Physics Letters, 81 (22), pp. 4233-4235, 2002. |
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