2021 |
|
![]() | Laura Schade; Suhas Mahesh; George Volonakis; Marios Zacharias; Bernard Wenger; Felix Schmidt; Sameer Vajjala Kesava; Dharmalingam Prabhakaran; Mojtaba Abdi-Jalebi; Markus Lenz; Feliciano Giustino; Giulia Longo; Paolo G Radaelli; Henry J Snaith Crystallographic, Optical, and Electronic Properties of the Cs2AgBi1–xInxBr6 Double Perovskite: Understanding the Fundamental Photovoltaic Efficiency Challenges Journal Article In: ACS Energy Letters, vol. 6, no. 3, pp. 1073-1081, 2021. @article{doi:10.1021/acsenergylett.0c02524, We present a crystallographic and optoelectronic study of the double perovskite Cs2AgBi1–xInxBr6. From structural characterization we determine that the indium cation shrinks the lattice and shifts the cubic-to-tetragonal phase transition point to lower temperatures. The absorption onset is shifted to shorter wavelengths upon increasing the indium content, leading to wider band gaps, which we rationalize through first-principles band structure calculations. Despite the unfavorable band gap shift, we observe an enhancement in the steady-state photoluminescence intensity, and n-i-p photovoltaic devices present short-circuit current greater than that of neat Cs2AgBiBr6 devices. In order to evaluate the prospects of this material as a solar absorber, we combine accurate absorption measurements with thermodynamic modeling and identify the fundamental limitations of this system. Provided radiative efficiency can be increased and the choice of charge extraction layers are specifically improved, this material could prove to be a useful wide band gap solar absorber. |
![]() | Murali Gedda; Emre Yengel; Hendrik Faber; Fabian Paulus; Joshua A Kreß; Ming-Chun Tang; Siyuan Zhang; Christina A Hacker; Prashant Kumar; Dipti R Naphade; Yana Vaynzof; George Volonakis; Feliciano Giustino; Thomas D Anthopoulos Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors Journal Article In: Advanced Materials, vol. 33, no. 7, pp. 2003137, 2021. @article{https://doi.org/10.1002/adma.202003137, Abstract Controlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden–Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)2PbBr4) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)2PbBr4 domains overlaid by a ≈5-nm-thin C8-BTBT layer. Transistors with (PEA)2PbBr4/C8-BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C8-BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)2PbBr4 act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (104), good data retention, and high endurance (>104 cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. |
2020 |
|
![]() | Francesco Macheda; Samuel Poncé; Feliciano Giustino; Nicola Bonini Theory and Computation of Hall Scattering Factor in Graphene Journal Article In: Nano Letters, vol. 20, no. 12, pp. 8861-8865, 2020, (PMID: 33226824). @article{doi:10.1021/acs.nanolett.0c03874, The Hall scattering factor, r, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments, it is usually assumed to be 1. In this paper, we use a combination of analytical and ab initio modeling to determine r in graphene. Although at high carrier densities r ≈ 1 in a wide temperature range, at low doping the temperature dependence of r is very strong with values as high as 4 below 300 K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures, r can instead become as low as 0.5 due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately r in graphene in a wide range of temperatures and carrier densities. |
![]() | Adam Wright; George Volonakis; Juliane Borchert; Christopher Davies; Feliciano Giustino; Michael B Johnston; Laura M Herz Intrinsic quantum confinement in formamidinium lead triiodide perovskite Journal Article In: Nature Materials, vol. 19, no. 11, pp. 1201-1206, 2020. @article{Wright2020, Understanding the electronic energy landscape in metal halide perovskites is essential for further improvements in their promising performance in thin-film photovoltaics. Here, we uncover the presence of above-bandgap oscillatory features in the absorption spectra of formamidinium lead triiodide thin films. We attribute these discrete features to intrinsically occurring quantum confinement effects, for which the related energies change with temperature according to the inverse square of the intrinsic lattice parameter, and with peak index in a quadratic manner. By determining the threshold film thickness at which the amplitude of the peaks is appreciably decreased, and through ab initio simulations of the absorption features, we estimate the length scale of confinement to be 10–20 nm. Such absorption peaks present a new and intriguing quantum electronic phenomenon in a nominally bulk semiconductor, offering intrinsic nanoscale optoelectronic properties without necessitating cumbersome additional processing steps. |
![]() | N B Brookes; D Betto; K Cao; Yi Lu; K Kummer; F Giustino Spin waves in metallic iron and nickel measured by soft x-ray resonant inelastic scattering Journal Article In: Phys. Rev. B, vol. 102, pp. 064412, 2020. @article{PhysRevB.102.064412, The spin-wave dispersions in iron and nickel along the [111] direction are determined using soft x-ray resonant inelastic x-ray scattering (RIXS). For iron, a 10-nm thin film was studied and, over the limited q range accessible, the peaks disperse as expected for a spin wave and in agreement with inelastic neutron scattering (INS) results. At the higher q values damping is observed with the peaks weakening and broadening. This damping is less pronounced than in the INS studies. The RIXS results are also compared with ab initio spin fluctuation calculations. The calculations slightly underestimate the energy dispersion and the damping is larger than in the measurement. Nevertheless, the agreement between the RIXS results, INS studies, and the theory is quite satisfactory. For the single crystal of nickel, the measured q dispersion flattens out rapidly and the peaks broaden. The strong damping effect is reproduced by the spin fluctuation calculations but the energy of the peaks is largely overestimated. Nevertheless, the flattening of the dispersion is not reproduced by the calculations and, although similar effects were observed in early INS experiments, they are not seen in more recent work. Possible reasons for this are discussed. These measurements show that using soft x-ray RIXS to study spin fluctuations in metallic systems, which are in general very challenging for the technique, has much promise. More interestingly, since the iron measurements were performed on a 10-nm thin film, the study opens the possibility to study tailor-made thin-film samples, which cannot be easily studied by other techniques. Combining these studies with state-of-the-art ab initio calculations opens up interesting prospects for testing our understanding of spin waves in metallic systems. |
![]() | H. Paudyal; S. Poncé; F. Giustino; E. R. Margine Superconducting properties of MoTe2 from ab initio anisotropic Migdal-Eliashberg theory Journal Article In: Physical Review B, vol. 101, pp. 214515, 2020. BibTeX | Links: @article{Paudyal2020, |
![]() | M.-A. Husanu; L. Vistoli; C. Verdi; A. Sander; V. Garcia; J. Rault; F. Bisti; T. Schmitt; F. Giustino; A. S. Mishchenko; M. Bibes; V. N. Strocov Electron-polaron dichotomy of charge carriers in perovskite oxides Journal Article In: Communications Physics, vol. 3, pp. s42005-020-0330-6, 2020. BibTeX | Links: @article{Husanu2020, |
![]() | Marios Zacharias; Feliciano Giustino Theory of the special displacement method for electronic structure calculations at finite temperature Journal Article In: Physical Review Research, vol. 2, pp. 013357, 2020. BibTeX | Links: @article{Zacharias2020, |
![]() | Samuel Poncé; Wenbin Li; Sven Reichardt; Feliciano Giustino First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials Journal Article In: Reports on Progress in Physics, vol. 83, no. 3, pp. 036501, 2020. BibTeX | Links: @article{Ponce2020, |
![]() | Feliciano Giustino; Jin Hong Lee; Felix Trier; Manuel Bibes; Stephen M Winter; Roser Valent í; Young-Woo Son; Louis Taillefer; Christoph Heil; Adriana I Figueroa; Bernard Pla ç; QuanSheng Wu; Oleg V Yazyev; Erik P A M Bakkers; Jesper Nygård; Pol Forn-D í; Silvano De Franceschi; J W McIver; Foa L E F Torres; Tony Low; Anshuman Kumar; Regina Galceran; Sergio O Valenzuela; Marius V Costache; Aur é; Eun-Ah Kim; Gabriel R Schleder; Adalberto Fazzio; Stephan Roche The 2021 quantum materials roadmap Journal Article In: Journal of Physics: Materials, vol. 3, no. 4, pp. 042006, 2020. @article{Giustino_2020, In recent years, the notion of ‘Quantum Materials’ has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and coldatom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moiré materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. We stress that this article is not meant to be a fully comprehensive review but rather an up-to-date snapshot of different areas of research on quantum materials with a minimal number of references focusing on the latest developments. |
![]() | Martin Schlipf; Henry Lambert; Nourdine Zibouche; Feliciano Giustino SternheimerGW: A program for calculating GW quasiparticle band structures and spectral functions without unoccupied states Journal Article In: Computer Physics Communications, vol. 247, pp. 106856, 2020. BibTeX | Links: @article{Schlipf2020, |
![]() | Wenbin Li; Feliciano Giustino Many-body renormalization of the electron effective mass of InSe Journal Article In: Physical Review B, vol. 101, no. 3, pp. 035201, 2020. BibTeX | Links: @article{Li2020, |
2019 |
|
![]() | Dmitry S Muratov; Artur R Ishteev; Dmitry A Lypenko; Vladislav O Vanyushin; Pavel Gostishev; Svetlana Perova; Danila S Saranin; Daniele Rossi; Matthias Auf der Maur; George Volonakis; Feliciano Giustino; Per. O Å Persson; Denis V Kuznetsov; Alexander Sinitskii; Di Carlo, Aldo Slot-die-printed two-dimensional ZrS3 charge transport layer for perovskite light-emitting diodes Journal Article In: ACS Applied Materials & Interfaces, vol. 11, no. 51, pp. 48021-48028, 2019. BibTeX | Links: @article{Muratov2019, |
![]() | Samuel Poncé; Debdeep Jena; Feliciano Giustino Route to high hole mobility in GaN via reversal of crystal-field splitting Journal Article In: Physical Review Letters, vol. 123, pp. 096602, 2019. BibTeX | Links: @article{Ponce2019b, |
![]() | Samuel Poncé; Debdeep Jena; Feliciano Giustino Hole mobility of strained GaN from first principles Journal Article In: Physical Review B, vol. 100, pp. 085204, 2019. BibTeX | Links: @article{Ponce2019c, |
![]() | Weng Hong Sio; Carla Verdi; Samuel Poncé; Feliciano Giustino Polarons from first principles, without supercells Journal Article In: Physical Review Letters, vol. 122, pp. 246403, 2019. BibTeX | Links: @article{Sio2019a, |
![]() | Weng Hong Sio; Carla Verdi; Samuel Poncé; Feliciano Giustino Ab initio theory of polarons: Formalism and applications Journal Article In: Physical Review B, vol. 99, pp. 235139, 2019. BibTeX | Links: @article{Sio2019b, |
![]() | Christian Dette; Miguel A Pérez-Osorio; Shai Mangel; Feliciano Giustino; Soon Jung Jung; Klaus Kern Trellises of molecular oxygen on anatase TiO2(101) Journal Article In: The Journal of Physical Chemistry C, vol. 123, no. 43, pp. 26170-26177, 2019. BibTeX | Links: @article{Dette2019b, |
![]() | Chao-Sheng Lian; Christoph Heil; Xiaoyu Liu; Chen Si; Feliciano Giustino; Wenhui Duan Coexistence of superconductivity with enhanced charge density wave order in the two-dimensional limit of TaSe2 Journal Article In: The Journal of Physical Chemistry Letters, vol. 10, no. 14, pp. 4076-4081, 2019. BibTeX | Links: @article{Lian2019, |
![]() | George Volonakis; Nobuya Sakai; Henry J Snaith; Feliciano Giustino Oxide analogs of halide perovskites and the new semiconductor Ba2AgIO6 Journal Article In: The Journal of Physical Chemistry Letters, vol. 10, no. 8, pp. 1722-1728, 2019. BibTeX | Links: @article{doi:10.1021/acs.jpclett.9b00193, |
2021 |
|
![]() | Crystallographic, Optical, and Electronic Properties of the Cs2AgBi1–xInxBr6 Double Perovskite: Understanding the Fundamental Photovoltaic Efficiency Challenges Journal Article In: ACS Energy Letters, vol. 6, no. 3, pp. 1073-1081, 2021. |
![]() | Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors Journal Article In: Advanced Materials, vol. 33, no. 7, pp. 2003137, 2021. |
2020 |
|
![]() | Theory and Computation of Hall Scattering Factor in Graphene Journal Article In: Nano Letters, vol. 20, no. 12, pp. 8861-8865, 2020, (PMID: 33226824). |
![]() | Intrinsic quantum confinement in formamidinium lead triiodide perovskite Journal Article In: Nature Materials, vol. 19, no. 11, pp. 1201-1206, 2020. |
![]() | Spin waves in metallic iron and nickel measured by soft x-ray resonant inelastic scattering Journal Article In: Phys. Rev. B, vol. 102, pp. 064412, 2020. |
![]() | Superconducting properties of MoTe2 from ab initio anisotropic Migdal-Eliashberg theory Journal Article In: Physical Review B, vol. 101, pp. 214515, 2020. |
![]() | Electron-polaron dichotomy of charge carriers in perovskite oxides Journal Article In: Communications Physics, vol. 3, pp. s42005-020-0330-6, 2020. |
![]() | Theory of the special displacement method for electronic structure calculations at finite temperature Journal Article In: Physical Review Research, vol. 2, pp. 013357, 2020. |
![]() | First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials Journal Article In: Reports on Progress in Physics, vol. 83, no. 3, pp. 036501, 2020. |
![]() | The 2021 quantum materials roadmap Journal Article In: Journal of Physics: Materials, vol. 3, no. 4, pp. 042006, 2020. |
![]() | SternheimerGW: A program for calculating GW quasiparticle band structures and spectral functions without unoccupied states Journal Article In: Computer Physics Communications, vol. 247, pp. 106856, 2020. |
![]() | Many-body renormalization of the electron effective mass of InSe Journal Article In: Physical Review B, vol. 101, no. 3, pp. 035201, 2020. |
2019 |
|
![]() | Slot-die-printed two-dimensional ZrS3 charge transport layer for perovskite light-emitting diodes Journal Article In: ACS Applied Materials & Interfaces, vol. 11, no. 51, pp. 48021-48028, 2019. |
![]() | Route to high hole mobility in GaN via reversal of crystal-field splitting Journal Article In: Physical Review Letters, vol. 123, pp. 096602, 2019. |
![]() | Hole mobility of strained GaN from first principles Journal Article In: Physical Review B, vol. 100, pp. 085204, 2019. |
![]() | Polarons from first principles, without supercells Journal Article In: Physical Review Letters, vol. 122, pp. 246403, 2019. |
![]() | Ab initio theory of polarons: Formalism and applications Journal Article In: Physical Review B, vol. 99, pp. 235139, 2019. |
![]() | Trellises of molecular oxygen on anatase TiO2(101) Journal Article In: The Journal of Physical Chemistry C, vol. 123, no. 43, pp. 26170-26177, 2019. |
![]() | Coexistence of superconductivity with enhanced charge density wave order in the two-dimensional limit of TaSe2 Journal Article In: The Journal of Physical Chemistry Letters, vol. 10, no. 14, pp. 4076-4081, 2019. |
![]() | Oxide analogs of halide perovskites and the new semiconductor Ba2AgIO6 Journal Article In: The Journal of Physical Chemistry Letters, vol. 10, no. 8, pp. 1722-1728, 2019. |